irf640s/l hexfet ? power mosfet pd -90902b s d g description 7/20/99 parameter typ. max. units r q jc junction-to-case CCC 1.0 r q ja junction-to-ambient ( pcb mounted,steady-state)** CCC 40 thermal resistance c/w parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 18 i d @ t c = 100c continuous drain current, v gs @ 10v ? 11 a i dm pulsed drain current ?? 72 p d @t a = 25c power dissipation 3.1 w p d @t c = 25c power dissipation 130 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 580 mj i ar avalanche current ? 18 a e ar repetitive avalanche energy ? 13 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings l surface mount (irf640s) l low-profile through-hole (irf640l) l available in tape & reel (irf640s) l dynamic dv/dt rating l 150c operating temperature l fast switching l fully avalanche rated 2 d pak to-262 v dss = 200v r ds(on) = 0.18 w i d = 18a third generation hexfets from international rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost- effectiveness. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application.the through-hole version (irf640l) is available for low-profile applications. www.irf.com 1
irf640s/l 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.29 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.18 w v gs = 10v, i d = 11a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.7 CCC CCC s v ds = 50v, i d = 11a ? CCC CCC 25 a v ds = 200v, v gs = 0v CCC CCC 250 v ds = 160v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 70 i d = 18a q gs gate-to-source charge CCC CCC 13 nc v ds =160v q gd gate-to-drain ("miller") charge CCC CCC 39 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 14 CCC v dd =100v t r rise time CCC 51 CCC i d = 18a t d(off) turn-off delay time CCC 45 CCC r g = 9.1 w t f fall time CCC 36 CCC r d = 5.4 w, see fig. 10 ?? between lead, CCC CCC and center of die contact c iss input capacitance CCC 1300 CCC v gs = 0v c oss output capacitance CCC 430 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 130 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) i gss ns i dss drain-to-source leakage current nh 7.5 l s internal source inductance ? v dd = 50v, starting t j = 25c, l = 2.7mh r g = 25 w , i as = 18a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ** when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ? i sd 18a, di/dt 150a/s, v dd v (br)dss , t j 150c ? pulse width 300s; duty cycle 2%. ? uses irf640 data and test conditions parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 2.0 v t j = 25c, i s = 18a, v gs = 0v ? t rr reverse recovery time CCC 300 610 ns t j = 25c, i f = 18a q rr reverse recovery charge CCC 3.4 7.1 c di/dt = 100a/s ?? source-drain ratings and characteristics s d g a 18 72 t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
irf640s/l www.irf.com 3 fig 1. typical output characteristics, t j = 25 o c fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics, t j = 175 o c
irf640s/l 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage
irf640s/l www.irf.com 5 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd
irf640s/l 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 12c. maximum avalanche energy vs. drain current fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v
irf640s/l www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irf640s/l 8 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) re f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - ga te 2 - d r ain 3 - s ou rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irf640s/l www.irf.com 9 package outline to-262 outline to-262 part marking information
irf640s/l 10 www.irf.com tape & reel information d 2 pak 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. c o n tr o ll in g d im e n s io n : m il lim e t e r . 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 7/99
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